参数资料
型号: AO4706
厂商: ALPHA
英文描述: 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 2K; RAM: 192; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 250 (@8MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLSP0020JB-A (20P2F-A)
中文描述: N沟道增强模式场效应晶体管
文件页数: 5/5页
文件大小: 488K
代理商: AO4706
AO4706
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
50
100
150
200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
I
R
VDS=12V
VDS=24V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
50
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
V
S
(
I
S
=1A
10A
20A
5A
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Q
r
0
3
6
9
12
15
18
I
di/dt=1000A/us
125oC
125oC
25oC
25oC
Qrr
Irm
0
3
6
9
12
15
0
5
10
15
20
25
30
Is (A)
Figure 15: Diode Reverse Recovery Time and
Soft Coefficient vs. Conduction Current
t
0
0.5
1
1.5
2
2.5
S
di/dt=1000A/us
125oC
125oC
25oC
25oC
trr
S
0
5
10
15
20
25
30
35
40
45
50
0
200
400
600
800
1000
1200
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Q
r
0
3
6
9
I
12
15
125oC
25oC
25oC
Is=20A
Qrr
Irm
0
3
6
9
12
15
18
21
24
27
0
200
400
600
di/dt (A)
800
1000
1200
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
t
0
0.5
1
1.5
2
2.5
S
125oC
125oC
25oC
25oC
Is=20A
trr
S
125o
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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