- 您现在的位置：买卖IC网 > PDF目录375333 > AO4800AL (ALPHA) Dual N-Channel Enhancement Mode Field Effect Transistor PDF资料下载
参数资料
| 型号： | AO4800AL |
| 厂商： | ALPHA |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 双N沟道增强型场效应晶体管 |
| 文件页数： | 1/4页 |
| 文件大小： | 114K |
| 代理商： | AO4800AL |
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
55
90
40
Max
62.5
110
48
R
θ
JL
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Maximum
30
±12
6.9
Units
V
V
A
T
A
=70°C
5.8
40
1.9
Pulsed Drain Current
B
T
A
=25°C
I
D
T
A
=70°C
1.2
W
Power Dissipation
Junction and Storage Temperature Range
T
A
=25°C
P
D
Steady-State
Steady-State
°C/W
°C/W
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Units
°C/W
t
≤
10s
R
θ
JA
AO4800A
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
= 10V)
R
DS(ON)
< 27m
(V
GS
= 10V)
R
DS(ON)
< 32m
(V
GS
= 4.5V)
R
DS(ON)
< 50m
(V
GS
= 2.5V)
General Description
The AO4800A uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in buck
converters.
Standard Product AO4800A is Pb-free
(meets ROHS & Sony 259 specifications). AO4800AL
is a Green Product ordering option. AO4800A and
AO4800AL are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
G1
D1
S1
G2
D2
S2
SOIC-8
Alpha & Omega Semiconductor, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| AO4800B | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4800BL | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4801A | Dual P-Channel Enhancement Mode Field Effect Transistor |
| AO4801 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| AO4801L | Dual P-Channel Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4800B | 功能描述:MOSFET DUAL N-CH 30V 6.9A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| AO4800B_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V Dual N-Channel MOSFET |
| AO4800BL | 制造商:AOS 功能描述:MOSFET |
| AO4800C | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V Dual N-Channel MOSFET |
| AO4800L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Plastic Encapsulated Device |
发布紧急采购，3分钟左右您将得到回复。