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参数资料
| 型号： | AOZ1342PI-1 |
| 厂商： | Alpha & Omega Semiconductor Inc |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | IC PWR DIST SW USB 2CH 8SO |
| 标准包装： | 3,000 |
| 系列： | EZPower™ |
| 类型： | USB 开关 |
| 输出数： | 2 |
| Rds（开）： | 135 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 1.5A |
| 输入电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SO 裸露焊盘 |
| 包装： | 带卷 (TR) |
AOZ1342
Absolute Maximum Ratings
Exceeding the Absolute Maximum Ratings may damage the
device.
Recommended Operating Conditions
The device is not guaranteed to operate beyond the
Recommended Operating Conditions.
ESD Rating
Parameter
Input Voltage (V IN )
Enable Voltage (V EN )
Storage Temperature (T S )
Maximum Continuous Current
(1)
Rating
6V
6V
-55 °C to +150 °C
1.5 A
2 kV
Parameter
Input Voltage (V IN )
Junction Temperature (T J )
Package Thermal Resistance
Exposed Pad SO-8 ( Θ JA )
Rating
+2.7 V to +5.5 V
-40 °C to +125 °C
45 °C/W
Note:
1. Devices are inherently ESD sensitive, handling precautions are
required. Human body model is a 100 pF capacitor discharging
through a 1.5 k Ω resistor.
Electrical Characteristics
T A = 25 °C, V IN = V EN = 5.5 V, unless otherwise specified.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
POWER SWITCH
R DS(ON)
Switch On-Resistance
V IN = 2.7 V to 5 V, I O = 0.5 A/1.5 A
70
135
m Ω
t r
Rise Time, Output
V IN = 5.5 V
C L = 1 μ F, R L = 5 Ω
0.6
1.5
ms
V IN = 2.7 V
0.4
1
t f
Fall time, Output
V IN = 5.5 V
0.05
0.5
ms
V IN = 2.7 V
0.05
0.5
FET Leakage Current
Out connect to ground,
2.7 V ≤ V IN ≤ 5.5 V,
V (ENx) = V IN or V (ENx) = 0 V
-40 °C ≤ T J ≤ 125
°C (2)
1
μ A
ENABLE INPUT EN OR EN
V IH
V IL
High-level Input Voltage
Low-level Input Voltage
2.7 V ≤ V IN ≤ 5.5 V
2.7 V ≤ V IN ≤ 5.5 V
2.0
0.8
V
V
I I
t on
t off
Input Current
Turn-on Time
Turn-off Time
C L = 100 μ F, R L = 5 Ω
C L = 100 μ F, R L = 5 Ω
-0.5
0.5
3
10
μ A
ms
CURRENT LIMIT
I OS
I OC_TRIP
Short-circuit Output
Current (per Channel)
Overcurrent Trip
Threshold (per Channel)
V (IN) = 2.7 V to 5.5 V, OUT connected to GND,
device enable into short-circuit, Channel 1 or 2
V (IN) = 5 V, current ramp ( ≤ 100 A/s) on OUT,
Channel 1 or 2
1.6
1.6
2.0
2.2
2.4
2.5
A
A
SUPPLY CURRENT
-40 °C ≤ T J ≤ 125 °C
Supply Current, Low-level
Output
No load on OUT,
2.7 V ≤ V IN ≤ 5.5 V,
V (ENx) = V IN or V (ENx) = 0 V
T J = 25°C
(2)
0.5
0.5
1
5
μ A
Supply current, High-level
Output
Reverse Leakage Current
No load on OUT, T J = 25 °C
V (ENx) = 0 V or V (ENx) = 5.5 V -40 °C ≤ T J ≤ 125 °C (2)
V (OUTx) = 5.5 V, IN = ground
65
65
0.2
81
90
μ A
μ A
Rev. 1.5 July 2011
www.aosmd.com
Page 3 of 12
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