参数资料
型号: AOZ8304ADI
厂商: Alpha & Omega Semiconductor Inc
文件页数: 3/8页
文件大小: 0K
描述: TVS DIODE ARRAY LOW CAP 10DFN
标准包装: 3,000
电压 - 反向隔离(标准值): 3.3V
电压 - 击穿: 3.5V
电极标记: 4 通道阵列 - 双向
安装类型: 表面贴装
封装/外壳: 10-UFDFN 裸露焊盘
供应商设备封装: 10-DFN
包装: 带卷 (TR)
AOZ8304A
Electrical Characteristics
T A = 25°C unless otherwise specified. Specifications in BOLD indicate a temperature range of -40 °C to +85 °C.
Symbol
V RWM
I R
V BR
V CL
Parameter
Reverse Working Voltage
Reverse Leakage Current
Reverse Breakdown Voltage
Channel Clamp Voltage
Positive Transients
Conditions
Between pin 5 and GND (4)
V RWM = 3.3 V, between pins 5 and GND
V BR = 1 mA
I PP = 5 A, tp = 100 ns, any I/O pin to
Ground (3)(6)(8)
Min.
3.5
Typ.
Max.
3.3
5
5.6
7.00
Units
V
μA
V
V
Negative Transient
-3.00
V
Channel Clamp Voltage
Positive Transients
Negative Transient
Channel Clamp Voltage
Positive Transients
Negative Transient
I PP = 10 A, tp = 100 ns, any I/O pin to
Ground (3)(6)(8)
I PP = 25 A, tp = 100 ns, any I/O pin to
Ground (3)(6)(8)
8.00
-4.00
10.00
-5.00
V
V
V
V
C j
Junction Capacitance
V R = 0 V, f = 1 MHz, any I/O pin to Ground
(3)(7)
V R = 0 V, f = 1 MHz, between I/O pins
(3)(7)
1.25
5
pF
pF
V R = 0 V, f = 1 MHz, any I/O pin to
Ground (3)(6)
5
6
pF
V R = 0 V, f = 1 MHz, between I/O
pins (3)(6)
2.5
pF
Notes:
3. These specifications are guaranteed by design.
4. The working peak reverse voltage, V RWM , should be equal to or greater than the DC or continuous peak operating voltage level.
5. V BR is measured at the pulse test current I T .
6. Measurements performed with no external capacitor on VP (pin 5 floating).
7. Measurements performed with VP biased to 3.3 Volts.
8. Measurements performed using a 100 ns Transmission Line Pulse (TLP) system.
Rev. 1.1 August 2011
www.aosmd.com
Page 3 of 8
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