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参数资料
| 型号： | AP01L60AT |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 160 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 105K |
| 代理商： | AP01L60AT |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
600V
▼ Fast Switching Characteristics
RDS(ON)
12Ω
▼ Simple Drive Requirement
ID
160mA
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V
mA
ID@TA=100℃
Continuous Drain Current, VGS @ 10V
mA
IDM
Pulsed Drain Current
1
mA
PD@TA=25℃
Total Power Dissipation
W
TSTG
℃
TJ
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
150
℃/W
Data & specifications subject to change without notice
600
Parameter
201023073-1/4
Storage Temperature Range
-55 to 150
RoHS-compliant Product
-55 to 150
300
0.83
100
160
Parameter
Rating
AP01L60AT
± 30
G
D
S
TO-92
G
D
S
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The TO-92 package is widely used for commercial-industrial applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP01L60AT_10 | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness |
| AP01L60H | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP01L60H_10 | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP01L60H-H | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:100% Avalanche Rated, Fast Switching Speed |
| AP01L60H-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:100% Avalanche Test, Fast Switching Characteristics |
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