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参数资料
| 型号： | AP02N60I-A |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 650 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 99K |
| 代理商： | AP02N60I-A |
AP02N60I-A
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0.8
0.9
1.0
1.1
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
R
DS(
ON)
V G =10V
I D =1A
0.0
0.5
1.0
1.5
0
5
10
15
20
V DS , Drain-to-Source Voltage (V)
I
D
,
Drain
Cu
rre
n
t(A)
T C =25
o C
10V
6.0V
5.5V
5.0V
V G =4.5V
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
5
10
15
20
V DS , Drain-to-Source Voltage (V)
I
D
,
Drain
Cu
rre
n
t(A)
T C =150
o C
10V
5.5V
6.0V
5.0V
V G =4.5V
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-50
0
50
100
150
T j , Junction Temperature (
o C )
V
GS(
th)
(V
)
0.01
0.1
1
10
0.01
0.21
0.41
0.61
0.81
1.01
1.21
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =150
o C
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP02N60I-A-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N60J | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N60J_08 | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N60J-H | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N60P | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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