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参数资料
| 型号： | AP04N70BI-A |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 650 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 105K |
| 代理商： | AP04N70BI-A |
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4
AP04N70BI-A
0
10
20
30
40
0
50
100
150
T c , Case Temperature (
o C )
P
D
(W
)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
25
50
75
100
125
150
T c , Case Temperature (
o C )
I
D
,
Dra
in
C
u
rre
nt
(A
)
0.01
0.1
1
10
100
1
10
100
1000
10000
V DS (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
No
rma
li
zed
Therma
lR
esp
o
n
se
(R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
SINGLE PULSE
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|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP04N70BI-H-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP04N70BP | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP04N70BP-A | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP04N70BP-A_07 | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP04N70BS-H-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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