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参数资料
| 型号： | AP04N70BI-A |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 650 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 105K |
| 代理商： | AP04N70BI-A |
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
5
AP04N70BI-A
0
1
2
3
4
5
-50
0
50
100
150
T j , Junction Temperature (
o C )
V
GS
(t
h
)(V
)
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rce
Voltage
(
V
)
I D =4A
V DS =480V
V DS =400V
V DS =320V
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V SD (V)
I
S(A
)
T j = 25
o C
T j =150
o C
1
100
10000
1
6
11
16
21
26
31
V DS (V)
C
(
p
F)
f=1.0MHz
Ciss
Coss
Crss
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP04N70BI-H-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP04N70BP | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP04N70BP-A | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP04N70BP-A_07 | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP04N70BS-H-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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