参数资料
型号: AP05N50EH-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 5 A, 500 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件页数: 1/4页
文件大小: 63K
代理商: AP05N50EH-HF
AP05N50EH/J-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
500V
▼ Fast Switching Characteristic
RDS(ON)
1.6Ω
▼ Simple Drive Requirement
ID
5A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
PD@TA=25℃
Total Power Dissipation
4
W
EAS
Single Pulse Avalanche Energy
2
mJ
IAR
Avalanche Current
A
TSTG
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1.7
℃/W
Rthj-a
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
201008041
Storage Temperature Range
-55 to 150
1
Parameter
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Parameter
+30
Rating
500
Halogen-Free Product
5
20
73.5
5
12.5
-55 to 150
2
The AP05N50 provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching, ruggedized design and cost-effectiveness.
G D
S
TO-252(H)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP05N50EJ) is available for low-profile
applications.
G
D
S
G
D
S
TO-251(J)
相关PDF资料
PDF描述
AP05N50EJ-HF 5 A, 500 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP05N50H-HF 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP15T15GH-HF 11.2 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP2306AGN-HF 5 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
AP2314GN-HF 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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