参数资料
型号: AP2306AGN-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 5 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件页数: 1/5页
文件大小: 106K
代理商: AP2306AGN-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Capable of 2.5V gate drive
BVDSS
30V
▼ Lower on-resistance
RDS(ON)
35mΩ
▼ Surface mount package
ID
5A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance Junction-ambient
3
90
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
1.38
-55 to 150
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current
3, V
GS @ 4.5V
4
Pulsed Drain Current
1
20
Gate-Source Voltage
+8
Continuous Drain Current
3, V
GS @ 4.5V
5
Parameter
Rating
Drain-Source Voltage
30
1
AP2306AGN-HF
Halogen-Free Product
200810141
G
D
S
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for all commercial-industrial
applications.
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相关代理商/技术参数
参数描述
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