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参数资料
| 型号： | AP2612GY-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6 |
| 文件页数： | 1/4页 |
| 文件大小： | 96K |
| 代理商： | AP2612GY-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Capable of 1.8V Gate Drive
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
35mΩ
▼ Surface Mount Device
ID
6A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃
/W
Data and specifications subject to change without notice
AP2612GY-HF
Halogen-Free Product
Parameter
Rating
Drain-Source Voltage
30
Gate-Source Voltage
+8
Continuous Drain Current
3, V
GS @ 4.5V
6
Storage Temperature Range
Continuous Drain Current
3, V
GS @ 4.5V
4.7
Pulsed Drain Current
1
20
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
201103241
Thermal Data
Parameter
1
G
D
S
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The S0T-26 package is widely used for commercial-industrial surface
mount applications.
D
G
S
SOT-26
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2613GY-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Fast Switching Characteristic, Lower Gate Charge |
| AP2613GYT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Capable of 1.8V Gate Drive, Small Size & Lower Profile |
| AP2614GY-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Lower On-resistance |
| AP2615GY-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Fast Switching Characteristic, Lower Gate Charge |
| AP2622GY | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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