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参数资料
| 型号： | AP2612GY-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6 |
| 文件页数： | 3/4页 |
| 文件大小： | 96K |
| 代理商： | AP2612GY-HF |
AP2612GY-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
0.4
0.8
1.2
1.6
2
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
V
GS(t
h)
(V
)
20
40
60
80
100
012345
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =1A
T A =25
o C
0
10
20
30
012
345
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
0
10
20
30
02468
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =5A
V G =4.5V
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
5.0V
4.5V
3.5V
2.5V
V G =1.5V
5.0V
4.5V
3.5V
2.5V
V G =1.5V
I D =1mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2613GY-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Fast Switching Characteristic, Lower Gate Charge |
| AP2613GYT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Capable of 1.8V Gate Drive, Small Size & Lower Profile |
| AP2614GY-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Lower On-resistance |
| AP2615GY-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Fast Switching Characteristic, Lower Gate Charge |
| AP2622GY | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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