- 您现在的位置：买卖IC网 > PDF目录57939 > AP0803GMT-A-HF (ADVANCED POWER ELECTRONICS CORP) 50 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | AP0803GMT-A-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8 |
| 文件页数： | 3/4页 |
| 文件大小： | 95K |
| 代理商： | AP0803GMT-A-HF |
AP0803GMT-A-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
20
40
60
80
100
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0
40
80
120
160
0.0
1.0
2.0
3.0
4.0
5.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0V
6.0V
5.0V
V G = 4.0 V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =30A
V G =10V
0
10
20
30
0
0.4
0.8
1.2
1.6
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
4
12
20
28
36
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =20A
T C =25
o C
0.0
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
相关PDF资料 |
PDF描述 |
|---|---|
| AP0903GM-HF | 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP0903GYT-HF | 16 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP0904GMT-HF | 17.5 A, 40 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP09N20BGI-HF | 7.8 A, 200 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP09N20BGP-HF | 7.8 A, 200 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP0803GMT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, SO-8 Compatible |
| AP0803GMT-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 8.5MOHM PMPAK5X6 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 8.5MOHM, PMPAK5X6 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 8.5MOHM, PMPAK5X6, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0085ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:29.7W, Operating , RoHS Compliant: Yes |
| AP08N60I-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP0903GH-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement |
| AP0903GMA | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
发布紧急采购，3分钟左右您将得到回复。