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参数资料
| 型号： | AP09N20H-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 8.6 A, 200 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 216K |
| 代理商： | AP09N20H-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
200V
▼ Low On-resistance
RDS(ON)
380mΩ
▼ Fast Switching Characteristics
ID
8.6A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
W/℃
EAS
Single Pulse Avalanche Energy
2
mJ
IAR
Avalanche Current
A
TSTG
℃
TJ
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1.8
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃
/W
Data & specifications subject to change without notice
200809112
Halogen-Free Product
AP09N20H/J-HF
40
-55 to 150
Parameter
8.6
+30
8.6
5.5
Parameter
Rating
200
1
Storage Temperature Range
-55 to 150
36
69
Linear Derating Factor
0.55
G
D S
TO-251(J)
G
D
S
TO-252(H)
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
The through-hole version (AP09N20J) is available for low-profile
applications.
G
D
S
相关PDF资料 |
PDF描述 |
|---|---|
| AP09N50I | 9 A, 500 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP09N70I-H-HF | 8.3 A, 700 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP10N70I-A | 10 A, 650 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP10N70R-A | 10 A, 650 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AP10N70S | 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP09N20J | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP09N50I | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP09N50I-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP09N50P-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP09N70I-A | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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