参数资料
型号: AP10N70I-A
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 10 A, 650 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220CFM, 3 PIN
文件页数: 1/5页
文件大小: 128K
代理商: AP10N70I-A
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
650V
▼ Fast Switching Characteristic
RDS(ON)
0.62Ω
▼ Simple Drive Requirement
ID
10A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
EAS
Single Pulse Avalanche Energy
2
mJ
TSTG
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
4
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
/W
Data & specifications subject to change without notice
10
40
31.3
6.8
50
-55 to 150
Parameter
± 30
Rating
650
RoHS-compliant Product
Parameter
AP10N70I-A
200810311
1
Storage Temperature Range
-55 to 150
G
D
S
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
相关PDF资料
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AP10N70R-A 10 A, 650 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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AP11N50I 11 A, 500 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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