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参数资料
| 型号： | AP11N50I |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 11 A, 500 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 93K |
| 代理商： | AP11N50I |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
500V
▼ Simple Drive Requirement
RDS(ON)
0.62Ω
▼ Fast Switching Characteristic
ID
11A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
EAS
Single Pulse Avalanche Energy
2
mJ
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.2
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃
/W
Data and specifications subject to change without notice
AP11N50I
RoHS-compliant Product
-55 to 150
Parameter
Rating
Drain-Source Voltage
500
Gate-Source Voltage
+30
Continuous Drain Current, VGS @ 10V
11
Operating Junction Temperature Range
-55 to 150
50
Continuous Drain Current, VGS @ 10V
5.6
Pulsed Drain Current
1
40
Storage Temperature Range
Total Power Dissipation
40
201008112
Thermal Data
Parameter
1
G
D
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
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