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参数资料
| 型号： | AP1203GH |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 37 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 97K |
| 代理商： | AP1203GH |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
12mΩ
▼ Fast Switching Characteristic
ID
37A
Description
□
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4.5
℃
/W
Rthj-a
62.5
℃
/W
Data & specifications subject to change without notice
AP1203GH
27.8
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
30
Total Power Dissipation
Gate-Source Voltage
+20
Continuous Drain Current
37
Continuous Drain Current
23.6
Pulsed Drain Current
1
150
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
200812291
1
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
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