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参数资料
| 型号： | AP16N50W |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 58K |
| 代理商： | AP16N50W |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
500V
▼ Simple Drive Requirement
RDS(ON)
0.4Ω
▼ Fast Switching Characteristic
ID
16A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
EAS
Single Pulse Avalanche Energy
3
mJ
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
40
℃/W
Data and specifications subject to change without notice
Operating Junction Temperature Range
-55 to 150
201010266
Thermal Data
Parameter
1
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
11
Pulsed Drain Current
1
60
Total Power Dissipation
250
-55 to 150
72
Gate-Source Voltage
+30
Continuous Drain Current, VGS @ 10V
16
Parameter
Rating
Drain-Source Voltage
500
AP16N50W
RoHS-compliant Product
G
D
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
G
D
S
TO-3P
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