参数资料
型号: AP18T10GH
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 1/4页
文件大小: 96K
代理商: AP18T10GH
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
100V
▼ Lower Gate Charge
RDS(ON)
160mΩ
▼ Fast Switching Characteristic
ID
9A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4.5
/W
Rthj-a
62.5
/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
200903052
1
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
AP18T10GH/J
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
100
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
9
Continuous Drain Current, VGS @ 10V
5.6
Pulsed Drain Current
1
30
Total Power Dissipation
28
-55 to 150
Operating Junction Temperature Range
-55 to 150
Thermal Data
Parameter
Storage Temperature Range
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP18T10GJ)
are available for low-profile applications.
G
D
S
TO-251(J)
G
D
S
TO-252(H)
相关PDF资料
PDF描述
AP18T10GJ 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP18T10GM-HF 3 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
AP18T10GP 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP20N15AGH-HF 20.5 A, 150 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP20N15GI-HF 20 A, 150 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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