参数资料
型号: AP18T10GH
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 4/4页
文件大小: 96K
代理商: AP18T10GH
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP18T10GH/J
0
2
4
6
8
10
12
0246
8
10
12
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =80 V
I D =5 A
Q
VG
10V
QGS
QGD
QG
Charge
10
100
1000
1
5
9
131721
2529
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
td(on) tr
td(off) tf
VDS
VGS
10%
90%
相关PDF资料
PDF描述
AP18T10GJ 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP18T10GM-HF 3 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
AP18T10GP 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP20N15AGH-HF 20.5 A, 150 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP20N15GI-HF 20 A, 150 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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