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参数资料
| 型号： | AP18N50W |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 177K |
| 代理商： | AP18N50W |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
500
-
V
RDS(ON)
Static Drain-Source On-Resistance
3
VGS=10V, ID=10A
-
0.27
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=10A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=400V, VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS=±30V
-
±100
nA
Qg
Total Gate Charge
3
ID=20A
-
94
150
nC
Qgs
Gate-Source Charge
VDS=400V
-
23
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
36
-
nC
td(on)
Turn-on Delay Time
3
VDD=200V
-
113
-
ns
tr
Rise Time
ID=10A
-
80
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
525
-
ns
tf
Fall Time
RD=20Ω
-
100
-
ns
Ciss
Input Capacitance
VGS=0V
-
4600
7400
pF
Coss
Output Capacitance
VDS=10V
-
350
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
10
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
3
IS=20A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
3
IS=20A, VGS=0V
-
490
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
10
-
uC
Notes:
1.Pulse width limited by Max junction temperature.
2.Starting Tj=25
oC , V
DD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP18N50W
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