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参数资料
| 型号： | AP18N50W |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 177K |
| 代理商： | AP18N50W |
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
AP18N50W
0
10
20
30
40
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
8.0 V
6.0V
V G = 5.0V
0
10
20
30
40
50
0.0
4.0
8.0
12.0
16.0
20.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10 V
8.0 V
6.0V
V G = 5.0 V
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =10A
V G =10V
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
V
GS(t
h)
(V
)
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
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