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参数资料
| 型号： | AP20T03GJ |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 12.5 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 96K |
| 代理商： | AP20T03GJ |
AP20T03GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
2
4
6
8
10
12
14
16
18
20
0.0
0.5
1.0
1.5
2.0
2.5
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
2
4
6
8
10
12
14
16
18
01
122
33
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
10V
7.0V
5.0V
4.5V
V G =3.0V
T C = 150
o C
0.5
0.8
1.0
1.3
1.5
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =8A
V G =10V
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V SD , Source-to-Drain Voltage (V)
Is
(
A
)
T j =25
o C
T j =150
o C
1.0
1.5
2.0
2.5
-50
0
50
100
150
T j ,Junction Temperature (
o C)
V
GS(t
h)
(V
)
35
45
55
65
75
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =5 A
T C =25
o C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP20T03GT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement |
| AP20T15GH-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP20T15GI-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP20T15GM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP20T15GP-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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