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参数资料
| 型号： | AP2302GN-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 3.2 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 96K |
| 代理商： | AP2302GN-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Capable of 2.5V gate drive
BVDSS
20V
▼ Small package outline
RDS(ON)
85mΩ
▼ Surface mount package
ID
3.2A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
90
℃
/W
Data and specifications subject to change without notice
Total Power Dissipation
1.38
-55 to 150
200902046
Thermal Data
Parameter
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.01
Storage Temperature Range
Continuous Drain Current
3, V
GS @ 4.5V
2.6
Pulsed Drain Current
1
10
Gate-Source Voltage
+12
Continuous Drain Current
3, V
GS @ 4.5V
3.2
Parameter
Rating
Drain-Source Voltage
20
Halogen-Free Product
1
AP2302GN-HF
G
D
S
D
G
S
SOT-23
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
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| AP2307GN-HF | 4 A, 16 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| AP2310GG-HF | 60 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2302L | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
| AP2302L_06 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
| AP2302LD- | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
| AP2302LD-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
| AP2302LDTR- | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
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