参数资料
型号: AP2302GN-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 3.2 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件页数: 3/4页
文件大小: 96K
代理商: AP2302GN-HF
AP2302GN-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
60
70
80
90
100
23
45
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D = 3.1 A
T A =25
o C
0
1
2
3
4
5
6
0.0
0.5
1.0
1.5
2.0
2.5
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
V G =2.0V
4.5V
3.5V
3.0V
2.5V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
V G =4.5V
I D =3.6A
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
V G =2.0V
4.5V
3.5V
3.0V
2.5V
0.1
1.0
10.0
0.1
0.5
0.9
1.3
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =150
o C
0.2
0.6
1.0
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
V
GS(t
h)
(V
)
相关PDF资料
PDF描述
AP2306AGEN 4.1 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
AP2306CGN-HF 5.5 A, 20 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
AP2307GN-HF 4 A, 16 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET
AP2310GG-HF 60 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
AP2321GN-HF 3.1 A, 40 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
AP2302L 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR
AP2302L_06 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR
AP2302LD- 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR
AP2302LD-E1 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR
AP2302LDTR- 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR