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参数资料
| 型号： | AP2302GN-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 3.2 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 96K |
| 代理商： | AP2302GN-HF |
AP2302GN-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
1s
1ms
10ms
100ms
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃/W
t
T
0
2
4
6
8
10
12
02
46
8
10
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =3.6A
V DS =10V
10
100
1000
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
td(on) tr
td(off)t
f
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2302L | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
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| AP2302LD- | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
| AP2302LD-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
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