参数资料
| 型号： | AP2111MPG-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 9/14页 |
| 文件大小： | 0K |
| 描述： | IC USB SWITCH 2.45A CURR 8MSOP |
| 标准包装： | 1 |
| 类型： | USB 开关 |
| 输出数： | 1 |
| Rds（开）： | 115 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 2.45A |
| 输入电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -35°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽）裸露焊盘 |
| 供应商设备封装： | 8-MSOP-EP |
| 包装： | 标准包装 |
| 产品目录页面： | 1136 (CN2011-ZH PDF) |
| 其它名称： | AP2111MPG-13DIDKR |
AP2101/AP2111
Application Information
Power Supply Considerations
A 0.1- μ F to 1- μ F X7R or X5R ceramic bypass capacitor between IN and GND, close to the device, is recommended. Placing a high-value
electrolytic capacitor on the input (10- μ F minimum) and output pin(s) is recommended when the output load is heavy. This precaution reduces
power-supply transients that may cause ringing on the input. Additionally, bypassing the output with a 0.01- μ F to 0.1- μ F ceramic capacitor
improves the immunity of the device to short-circuit transients.
Over-Current and Short Circuit Protection
An internal sensing FET is employed to check for over-current conditions. Unlike current-sense resistors, sense FETs do not increase the series
resistance of the current path. When an overcurrent condition is detected, the device maintains a constant output current and reduces the output
voltage accordingly. Complete shutdown occurs only if the fault stays long enough to activate thermal limiting.
Three possible overload conditions can occur. In the first condition, the output has been shorted to GND before the device is enabled or before
VIN has been applied. The AP2101/AP2111 senses the short circuit and immediately clamps output current to a certain safe level namely I LIMIT .
In the second condition, an output short or an overload occurs while the device is enabled. At the instance the overload occurs, higher current
may flow for a very short period of time before the current limit function can react. After the current limit function has tripped (reached the over-
current trip threshold), the device switches into current limiting mode and the current is clamped at I LIMIT .
In the third condition, the load has been gradually increased beyond the recommended operating current. The current is permitted to rise until the
current-limit threshold (I TRIG ) is reached or until the thermal limit of the device is exceeded. The AP2101/AP2111 is capable of delivering current
up to the current-limit threshold without damaging the device. Once the threshold has been reached, the device switches into its current limiting
mode and is set at I LIMIT .
To protect against short circuit to GND at extremely low temperature (< -30°C), a minimum 120- μ F electrolytic capacitor on the output pin is
recommended.
A correct capacitor type with capacitor voltage rating and temperature characteristics must be properly chosen so that
capacitance value does not drop too low at the extremely low temperature operation. A recommended capacitor should have temperature
characteristics of less than 10% variation of capacitance change when operated at extremely low temp. Our recommended aluminum electrolytic
capacitor type is Panasonic FC series.
At low input voltage condition (V IN < 3V), the short circuit protection current may rise as high as twice the typical value.
FLG Response
When an over-current or over-temperature shutdown condition is encountered, the FLG open-drain output goes active low after a nominal 7-ms
deglitch timeout.
The FLG output remains low until both over-current and over-temperature conditions are removed. Connecting a heavy
P D = R DS(ON) × I
capacitive load to the output of the device can cause a momentary over-current condition, which does not trigger the FLG due to the 7-ms deglitch
timeout. The AP2101/AP2111 is designed to eliminate false over-current reporting without the need of external components to remove unwanted
pulses.
Power Dissipation and Junction Temperature
The low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum operating
ambient temperature (T A ) and R DS(ON) , the power dissipation can be calculated by:
2
Finally, calculate the junction temperature:
T J = P D x R θ JA + T A
Where:
T A = Ambient temperature °C
R θ JA = Thermal resistance
P D = Total power dissipation
AP2101/AP2111
Document number: DS32015 Rev. 3 - 2
9 of 14
January 2013
? Diodes Incorporated
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