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参数资料
| 型号： | AP2111SG-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 3/14页 |
| 文件大小： | 0K |
| 描述： | IC USB SWITCH 2.45A CURRENT 8SOP |
| 标准包装： | 1 |
| 类型： | USB 开关 |
| 输出数： | 1 |
| Rds（开）： | 115 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 2.45A |
| 输入电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -35°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1136 (CN2011-ZH PDF) |
| 其它名称： | AP2111SG-13DIDKR |
AP2101/AP2111
Recommended Operating Conditions (@T A = +25°C, unless otherwise specified.)
Symbol
V IN
I OUT
T A
V IL
V IH
Parameter
Input voltage
Output Current
Operating Ambient Temperature
EN Input Logic Low Voltage
EN Input Logic High Voltage
Min
2.7
0
-35
0
2
Max
5.5
2.0
85
0.8
V IN
Units
V
A
° C
V
V
Electrical Characteristics (@T A = +25°C, V IN = +5.0V, unless otherwise specified.)
Symbol
V UVLO
I SHDN
I Q
Parameter
Input UVLO
Input Shutdown Current
Input Quiescent Current
Test Conditions (Note 5)
R LOAD = 1k ?
Disabled, I OUT = 0
Enabled, I OUT = 0
Min
1.6
Typ
1.9
0.5
45
Max
2.5
1
70
Unit
V
μA
μA
I LEAK
I REV
Input Leakage Current
Reverse Leakage Current
Disabled, OUT grounded
Disabled, V IN = 0V, V OUT = 5 V, I REV at V IN
0.05
1
μA
μA
T A = +25°C
R DS(ON)
Switch On-Resistance
V IN = 5V, I OUT = 1.5A
MSOP8-EP
SO-8
-40°C ≤ T A ≤ +85°C
90
95
115
115
140
m ?
V IN = 3.3V, I OUT = 1.5A
T A = 25°C
-40°C ≤ T A ≤ +85°C
115
140
170
I LIMIT
Over-Load Current Limit
V IN = 5V, V OUT = 4.5V, C L =120μF
2.1
2.45
2.8
A
I TRIG
I SHORT
T SHORT
V IL
V IH
I SINK
T D(ON)
Current Limiting Trigger Threshold
Short-Circuit Current Limit
Short-Circuit Response Time
EN Input Logic Low Voltage
EN Input Logic High Voltage
EN Input leakage
Output Turn-On Delay Time
Output Current Slew rate (<100A/s) , C L = 100μF
Enabled into short circuit, C L = 100μF
V OUT = 0V to I OUT = I LIMIT (short applied to output)
V IN = 2.7V to 5.5V
V IN = 2.7V to 5.5V
V EN = 5V
C L = 1μF, R LOAD = 10 ?
2
2.5
2.5
5
50
0.8
1
A
A
μs
V
V
μA
μs
T R
T D(OFF)
T F
R FLG
Output Turn-On Rise Time
Output Turn-Off Delay Time
Output Turn-Off Fall Time
FLG Output FET On-Resistance
C L = 1μF, R LOAD = 10 ?
C L = 1μF, R LOAD = 10 ?
C L = 1μF, R LOAD = 10 ?
I FLG =10mA, C L =100μF
0.6
4
0.03
20
1.5
0.1
40
ms
μs
ms
?
T BLANK
R DIS
T SHDN
FLG Blanking Time
Discharge Resistance (Note 6)
Thermal Shutdown Threshold
C IN = 10μF, C L = 100μF
V IN = 5V, disabled, I OUT = 1mA
Enabled, R LOAD = 1k ?
4
7
290
140
15
ms
?
° C
T HYS
Thermal Shutdown Hysteresis
25
° C
θ JA
Thermal Resistance Junction-to-
Ambient
SO-8 (Note 7)
MSOP-8EP (Note 8)
110
60
° C/W
° C/W
Notes:
5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
6. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path for
the external storage capacitor. This is suitable only to discharge filter capacitors for limited time and cannot dissipate steady state currents greater than
8mA.
7. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.
8. Test condition for MSOP-8EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and
thermal vias to bottom layer ground plane.
AP2101/AP2111
Document number: DS32015 Rev. 3 - 2
3 of 14
January 2013
? Diodes Incorporated
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