- 您现在的位置：买卖IC网 > PDF目录48366 > AP2334GN-HF (ADVANCED POWER ELECTRONICS CORP) 5.6 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | AP2334GN-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 5.6 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 57K |
| 代理商： | AP2334GN-HF |
AP2334GN-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
40
01
23
45
6
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0
10
20
30
40
0123
456
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
V
GS(t
h)
(V
)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =5A
V DS =10V
20
30
40
50
246
8
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =3A
T A =25
o C
相关PDF资料 |
PDF描述 |
|---|---|
| AP2612GY-HF | 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP26G40GEO-HF | 400 V, N-CHANNEL IGBT |
| AP2761I-H | 6 A, 700 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP2R803GH | 75 A, 30 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP30P10GI | 25 A, 100 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2334GN-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 28MOHM SOT-23 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 28MOHM, SOT-23 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 28MOHM, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:5.6A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.028ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:1.38W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 28MOHM, SOT-23, Transistor Polarity:N Channel, Continuous Drai |
| AP2337 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:1.0A SINGLE CHANNEL CURRENT-LIMITED LOAD SWITCH |
| AP2337SA-7 | 功能描述:两极晶体管 - BJT USB Power Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| AP2338GN-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Capable of 1.8V Gate Drive, Small Outline Package |
| AP2338GN-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 35MOHM SOT-23 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 35MOHM, SOT-23 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 35MOHM, SOT-23, Transistor Polarity:N Channel, Continuous Drai |
发布紧急采购，3分钟左右您将得到回复。