参数资料
型号: AP2761S-A-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 10 A, 650 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN
文件页数: 3/4页
文件大小: 94K
代理商: AP2761S-A-HF
AP2761S-A-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
1
2
3
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =3.5A
V G =10V
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
0
4
8
12
16
20
0
5
10
15
20
25
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
V G =4.0V
10V
7.0V
6.0V
5.0V
0
2
4
6
8
10
0
10203040
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
V G =4.0V
10V
7.0V
6.0V
5.0V
0
2
4
6
8
10
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j = 25
o C
T j = 150
o C
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
相关PDF资料
PDF描述
AP2762S-A-HF 7 A, 650 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP2763I-A 8 A, 750 V, 1.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP2763W-A 8 A, 750 V, 1.45 ohm, N-CHANNEL, Si, POWER, MOSFET
AP2764AI-HF 9 A, 600 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP2765I-A-HF 8 A, 650 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
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