参数资料
型号: AP2761S-A-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 10 A, 650 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN
文件页数: 4/4页
文件大小: 94K
代理商: AP2761S-A-HF
AP2761S-A-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0
1
10
100
1
10
100
1000
10000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS
QGD
QG
Charge
0
1000
2000
3000
4000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
4
8
12
16
0
2040
6080
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =10A
V DS =330V
V DS =410V
V DS =520V
Operation in this area
limited by RDS(ON)
相关PDF资料
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AP2762S-A-HF 7 A, 650 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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