- 您现在的位置：买卖IC网 > PDF目录57940 > AP2762R-A (ADVANCED POWER ELECTRONICS CORP) 7 A, 650 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA PDF资料下载
参数资料
| 型号： | AP2762R-A |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 650 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, TO-262, 3 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 93K |
| 代理商： | AP2762R-A |
I D
,DRAIN
CURRENT
(AMPERES)
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
C,
CAPACITANCE
(pF)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
(ON),
DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
(NORMALIZED)
VOLTAGE
(NORMALIZED)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE4,TYPICALTRANSFERCHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=10V
VGS=20V
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
Crss
Coss
Ciss
20
15
10
5
0
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
.1
100S
1mS
10mS
100mS
DC
OPERATION HERE
LIMITED BY RDS (ON)
TC =+25°C
TJ =+150°C
SINGLE PULSE
0
2468
0
10
20
30
40
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
1
10
100
1000
.01
.1
1
10
50
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
20,000
10,000
5,000
1,000
500
100
NORMALIZEDTO
V
GS
= 10V @ 0.5 I
D
[Cont.]
050-5904
Rev
C
3-2002
相关PDF资料 |
PDF描述 |
|---|---|
| AP2764AI | 9 A, 600 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP2764AP-A | 9 A, 650 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP294 | 10 MHz - 200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AP30G100W | 60 A, 1000 V, N-CHANNEL IGBT |
| AP30G120SW | 60 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2762R-A-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2762S-A-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2763I-A | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2763W-A | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2764AI | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
发布紧急采购，3分钟左右您将得到回复。