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参数资料
| 型号： | AP30G120SW |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 60 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 99K |
| 代理商： | AP30G120SW |
Advanced Power
N-CHANNEL INSULATED GATE
Electronics Corp.
Features
▼ High speed switching
▼ Low Saturation Voltage
VCE(sat)=3.0V@IC=30A
Absolute Maximum Ratings
, 1/8" from case for 5 seconds .
Notes:
1.Repetitive rating : Pulse width limited by max . junction temperature .
Thermal Data
Symbol
Rthj-c(IGBT)
Rthj-c(Diode)
Rthj-a
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Min.
Typ.
Max. Units
BVCES
1200
-
V
IGES
-
±500
nA
ICES
--
1
mA
VCE(sat)
-
3
3.6
V
-
3.8
-
V
VGE(th)
3
4.4
7
V
Qg
-55
88
nC
Qge
-12
-
nC
Qgc
-27
-
nC
td(on)
-20
-
ns
tr
-20
-
ns
td(off)
-65
-
ns
tf
-
200
300
ns
Eon
-
1.8
-
mJ
Eoff
-
1.1
-
mJ
Cies
-
1320 2110
pF
Coes
-
105
-
pF
Cres
-9-
pF
VF-1
-
1.7
2
V
VF-2
-
1.8
2.4
V
trr
-80
-
ns
Qrr
-22
-
nC
Data and specifications subject to change without notice
BIPOLAR TRANSISTOR WITH FRD.
℃
Maximum Lead Temp. for Soldering Purposes
300
Gate-Emitter Voltage
Continuous Collector Current
A
Reverse Transfer Capacitance
TSTG
Gate-Collector Charge
Total Gate Charge
Parameter
Gate-to-Emitter Leakage Current
Turn-on Delay Time
℃
/W
℃
/W
Thermal Resistance Junction-Case
Parameter
Value
0.6
Thermal Resistance Junction-Case
1.6
℃
/W
A
AP30G120SW
Symbol
VCES
1200V
Rating
Collector-Emitter Voltage
Units
V
1200
f=1.0MHz
-55 to 150
VGE=15V, IC=30A
VCE=VGE, IC=1mA
IC=30A
VGE=±30V, VCE=0V
VGE=0V, IC=250uA
40
VGE=0V
W
℃
VCC=500V
Maximum Power Dissipation
Test Conditions
Storage Temperature Range
208
Collect-to-Emitter Breakdown Voltage
℃
Units
VGE=15V
Thermal Resistance Junction-Ambient
▼ RoHS Compliant
Output Capacitance
Input Capacitance
PD@TC=25℃
TJ
ICM
VCE=30V
Parameter
200630061-1/3
Pb Free Plating Product
Operating Junction Temperature Range
Gate-Emitter Charge
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Leakage Current
VGE=15V, IC=60A
TL
VCE=1200V, VGE=0V
Reverse Recovery Time
IF=10A
Reverse Recovery Charge
di/dt = 100 A/s
Forward Voltage
IF=10A
Forward Voltage
IF=20A
IC@TC=100℃
IC@TC=25℃
Continuous Collector Current
Electrical Characteristics of Diode@Tj=25℃(unless otherwise specified)
VCC=600V,
Ic=30A,
VGE=15V,
RG=5,
Inductive Load
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
75
A
▼ CO-PAK, IGBT with FRD
IF@TC=100℃
IFM
Diode Continunous Forward Current
Diode Pulse Forward Current
Pulsed Collector Current
1
VGE
30A
VCES
IC
12
V
160
A
±30
30
60
G
C
E
TO-3P
G
C
E
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP30G120W | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G40GEO-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30N30W | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30N30WI | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30P10GH-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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