参数资料
型号: AP30N30WI
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 30 A, 250 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, TO-3PF, FULL PACK-3
文件页数: 1/4页
文件大小: 111K
代理商: AP30N30WI
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
250V
▼ Simple Drive Requirement
RDS(ON)
68mΩ
▼ Lower On-resistance
ID
30A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
IDM
A
PD@TC=25℃
W
W/℃
EAS
Single Pulse Avalanche Energy
3
mJ
IAR
Avalanche Current
A
TSTG
TJ
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
1.5
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
42
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
83
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.7
Pulsed Drain Current
1
120
Gate-Source Voltage
±30
Continuous Drain Current, VGS @ 10V
30
Parameter
Rating
Drain-Source Voltage
250
201216053-1/4
AP30N30WI
Pb Free Plating Product
450
30
G
D
S
AP30N30 from APEC provide the designer with the best combination
of fast switching , low on-resistance and cost-effectiveness .
The TO-3PF fullpack eliminates the need for additional insulating
hardware in commercial-industrial applications.
TO-3PF
G
D
S
相关PDF资料
PDF描述
AP30T10GH-HF 19 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP3310GH 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP3310GJ 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
AP3310GJ-HF 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
AP3310GH-HF 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
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