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参数资料
| 型号： | AP3310GJ |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 5/6页 |
| 文件大小： | 105K |
| 代理商： | AP3310GJ |
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
5
AP3310GH/J
0
1
2
3
4
5
024
68
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rce
Voltage
(
V
)
I D =-2.8A
V DS =-6V
10
100
1000
13
579
11
13
-V DS (V)
C
(
p
F)
f=1.0MHz
Ciss
Coss
Crss
0
1
10
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-V SD (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0
0.5
1
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
-V
GS
(t
h
)(V
)
相关PDF资料 |
PDF描述 |
|---|---|
| AP3310GJ-HF | 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP3310GH-HF | 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP3405GH-HF | 8.6 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP34M60B | 34 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB |
| AP34M60S | 34 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP3310GJ-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Simple Drive Requirement |
| AP3310H | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP3310J | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP331A | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE DIFFERENTIAL COMPARATOR |
| AP331AWG-7 | 功能描述:校验器 IC 2V-36V 2.5mA 2V-36V 2.5mA RoHS:否 制造商:STMicroelectronics 产品: 比较器类型: 通道数量: 输出类型:Push-Pull 电源电压-最大:5.5 V 电源电压-最小:1.1 V 补偿电压（最大值）:6 mV 电源电流（最大值）:1350 nA 响应时间: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SC-70-5 封装:Reel |
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