参数资料
型号: AP4002T
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: 小信号晶体管
英文描述: 400 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 4/5页
文件大小: 109K
代理商: AP4002T
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP4002T
0.001
0.01
0.1
1
10
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T L =25
o C
Single Pulse
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
4
8
12
16
0
4
8
12
16
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =2A
V DS =480V
10
100
1000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS
QGD
QG
Charge
Duty factor = t/T
Peak Tj = PDM x Rthjl + TL
Rthjl=60
oC/W
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