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参数资料
| 型号： | AP40G120AW |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 80 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 93K |
| 代理商： | AP40G120AW |
Advanced Power
N-CHANNEL INSULATED GATE
Electronics Corp.
BIPOLAR TRANSISTOR
Features
VCES
▼ Advanced IGBT Technology
IC
▼ Low Saturation Voltage
VCE(sat)=3V@IC=40A
▼ Industry Standard TO-3P Package
Absolute Maximum Ratings
, 1/8" from case for 10 seconds .
Notes:
1.Pulse width limited by max. junction temperature .
Thermal Data
Symbol
Rthj-c
Rthj-a
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Min.
Typ.
Max.
Units
BVCES
1200
-
V
IGES
--
+100
nA
ICES
-
500
uA
VCE(sat)
-
3
3.4
V
-
3.7
V
VGE(th)
3-
7
V
Qg
-
155
-
nC
Qge
-27
-
nC
Qgc
-90
-
nC
td(on)
-35
-
ns
tr
-30
-
ns
td(off)
-
150
-
ns
tf
-
310
-
ns
Eon
-
2.1
-
mJ
Eoff
-
3.1
-
mJ
Cies
-
3010
-
pF
Coes
-
215
-
pF
Cres
-22
-
pF
Data and specifications subject to change without notice
℃
Maximum Lead Temp. for Soldering Purposes
300
℃
Reverse Transfer Capacitance
TSTG
Gate-Collector Charge
Total Gate Charge
Parameter
Gate-to-Emitter Leakage Current
Turn-on Delay Time
Output Capacitance
TJ
℃
/W
℃
/W
Thermal Resistance Junction-Case
Parameter
Value
0.3
40
Units
AP40G120AW
Symbol
VCES
1200V
40A
Rating
Collector-Emitter Voltage
Units
V
1200
A
V
160
A
+20
40
80
A
VGE=0V
Pulsed Collector Current
1
VGE
IC@TC=100℃
IC@TC=25℃
Continuous Collector Current
Gate-Emitter Voltage
Continuous Collector Current
Input Capacitance
PD@TC=25℃
f=1.0MHz
-55 to 150
VGE=15V, IC=40A
VCE=VGE, IC=250uA
IC=40A
VGE=+20V, VCE=0V
VGE=0V, IC=250uA
VCE=30V
VGE=15V
Parameter
W
℃
VCC=500V
Maximum Power Dissipation
Test Conditions
Storage Temperature Range
417
Collect-to-Emitter Breakdown Voltage
ICM
1
Operating Junction Temperature Range
Gate-Emitter Charge
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Leakage Current
VGE=15V, IC=50A
TL
VCE=1200V, VGE=0V
RoHS-compliant Product
201103291
VCC=600V,
Ic=40A,
VGE=15V,
RG=5,
Inductive Load
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Thermal Resistance Junction-Ambient
G
C
E
G
C
E
TO-3P
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP40G120W | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP40HV | 功能描述:整流器/与可变电容器 PTFE Dielectric 1000V 1.5 to 40.0pF RoHS:否 制造商:Xicon 电容范围:2.8 pF to 12.5 pF 容差: 电压额定值:200 V 工作温度范围:- 35 C to + 85 C 端接类型:SMD/SMT 产品:Trimmer Capacitors - Ceramic Dielectric |
| AP40N03GJ-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Fast Switching Characteristic RoHS Compliant & Halogen-Free |
| AP40N03GP | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low Gate Charge Simple Drive Requirement |
| AP40N03GS | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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