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参数资料
| 型号： | AP40T10GR |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 40 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, TO-262, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 93K |
| 代理商： | AP40T10GR |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
100V
▼ Single Drive Requirement
RDS(ON)
35mΩ
▼ Fast Switching Characteristic
ID
40A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
125
-55 to 175
Operating Junction Temperature Range
-55 to 175
Continuous Drain Current, VGS @ 10V
27
Pulsed Drain Current
1
150
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
40
Parameter
Rating
Drain-Source Voltage
100
RoHS-compliant Product
1
AP40T10GR
200904141
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-262(R)
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