参数资料
型号: AP40T10GP
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 39 A, 105 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220, 3 PIN
文件页数: 2/5页
文件大小: 133K
代理商: AP40T10GP
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
105
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=15A
-
35
VGS=6V, ID=10A
-
38
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=15V, ID=15A
-
14.5
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=100V, VGS=0V
-
10
uA
Drain-Source Leakage Current (Tj=125
oC)
VDS=80V ,VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=40A
-
24
40
nC
Qgs
Gate-Source Charge
VDS=50V
-
5.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
9.6
-
nC
td(on)
Turn-on Delay Time
2
VDS=50V
-
9
-
ns
tr
Rise Time
ID=40A
-
64
-
ns
td(off)
Turn-off Delay Time
RG=2.5Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=1.25Ω
-75
-
ns
Ciss
Input Capacitance
VGS=0V
-
1310
2100
pF
Coss
Output Capacitance
VDS=25V
-
270
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=30A, VGS=0V
-
1.2
V
t
rr
Reverse Recovery Time
2
IS=30A, VGS=0V,
-
60
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
125
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP40T10GP
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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