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参数资料
| 型号： | AP4232BGM-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 7.6 A, 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件页数： | 4/4页 |
| 文件大小： | 93K |
| 代理商： | AP4232BGM-HF |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP4232BGM-HF
Q
VG
4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
024
68
10
12
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =15V
I D =7 A
0
100
200
300
400
500
600
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135℃/W
t
T
0.02
Operation in this
area limited by
RDS(ON)
td(on) tr
td(off) tf
VDS
VGS
10%
90%
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相关代理商/技术参数 |
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|---|---|
| AP4232BGM-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET DUALN 30V 22MOHM SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, DUALN, 30V, 22MOHM, SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, DUALN, 30V, 22MOHM, SO-8, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:7.6A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.022ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:2W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, DUALN, 30V, 22MOHM, SO-8, Transistor Polarity:Dual N Channel, Continuous |
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| AP4232GM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-Resistance, Simple Drive Requirement |
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