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参数资料
| 型号： | AP4425GO |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 4200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT, TSSOP-8 |
| 文件页数： | 4/4页 |
| 文件大小： | 118K |
| 代理商： | AP4425GO |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
AP4425GO
4/4
0.01
0.1
1
10
100
0.1
1
10
100
-V DS (V)
-I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=120
oC/W
t
T
0.01
0.05
0.1
0.2
Duty Factor=0.5
Single Pulse
0.02
0
2
4
6
8
0
5
10
15
20
25
30
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS = -10V
I D = -4A
100
1000
10000
1
5
9
1317
2125
-V DS (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
Q
VG
QGS
QGD
QG
Charge
-4.5V
0
5
10
15
20
25
30
012
34
-V GS , Gate-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS = -5V
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