参数资料
型号: AP4439GM-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 13.3 A, 30 V, 0.01 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件页数: 1/4页
文件大小: 93K
代理商: AP4439GM-HF
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
-30V
▼ Lower On-resistance
RDS(ON)
10mΩ
▼ Fast Switching Characteristic
ID
-13.3A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
50
/W
Data and specifications subject to change without notice
201011043
1
AP4439GM-HF
Rating
-30
+20
-13.3
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
-10.6
Pulsed Drain Current
1
-50
Halogen-Free Product
Thermal Data
Parameter
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Storage Temperature Range
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
G
D
SO-8
G
D
S
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