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参数资料
| 型号： | AP4502GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 8.3 A, 20 V, 0.016 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 2/7页 |
| 文件大小： | 118K |
| 代理商： | AP4502GM |
N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=9A
-
16
m
VGS=4.5V, ID=8.3A
-
18
m
VGS=2.5V, ID=5.2A
-
30
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
V
gfs
Forward Transconductance
VDS=10V, ID=8.3A
-
8.3
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC) V
DS=16V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=8A
-
22
-
nC
Qgs
Gate-Source Charge
VDS=16V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
td(on)
Turn-on Delay Time
2
VDS=10V
-
11
-
ns
tr
Rise Time
ID=1A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
30
-
ns
tf
Fall Time
RD=10Ω
-14
-
ns
Ciss
Input Capacitance
VGS=0V
-
1350
-
pF
Coss
Output Capacitance
VDS=20V
-
325
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
255
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=1.8A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=8A, VGS=0V,
-
32
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
24
-
nC
2
AP4502GM
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