- 您现在的位置：买卖IC网 > PDF目录57941 > AP4503AGM (ADVANCED POWER ELECTRONICS CORP) 6.9 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | AP4503AGM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 6.9 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 2/7页 |
| 文件大小： | 83K |
| 代理商： | AP4503AGM |
N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=6A
-
28
mΩ
VGS=4.5V, ID=4A
-
42
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC) V
DS=24V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=6A
-
8.4
13.5
nC
Qgs
Gate-Source Charge
VDS=24V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.7
-
nC
td(on)
Turn-on Delay Time
2
VDS=20V
-
5
-
ns
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18.5
-
ns
tf
Fall Time
RD=20Ω
-9
-
ns
Ciss
Input Capacitance
VGS=0V
-
485
770
pF
Coss
Output Capacitance
VDS=25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=1.7A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=6A, VGS=0V,
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
11
-
nC
2
AP4503AGM
相关PDF资料 |
PDF描述 |
|---|---|
| AP4506GEH | 30 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP4509AGH-HF | 30 V, 0.01 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| AP4509AGM-HF | 11.2 A, 30 V, 0.01 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| AP4513GM-HF | 35 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| AP4523GM | 40 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP4503AGM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Fast Switching Performance |
| AP4503BGM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower Gate Charge |
| AP4503BGO-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower Gate Charge |
| AP4503GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4503GM_10 | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
发布紧急采购，3分钟左右您将得到回复。