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参数资料
| 型号： | AP4503BGM-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 8.2 A, 30 V, 0.018 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件页数： | 5/7页 |
| 文件大小： | 118K |
| 代理商： | AP4503BGM-HF |
AP4503BGM-HF
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
30
-30
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
Q
VG
4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
0246
8
10
12
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rce
Voltage
(
V
)
I D =8 A
V DS =15 V
0
100
200
300
400
500
600
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
No
rma
li
zed
Therma
lR
esp
o
n
se
(R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
td(on) tr
td(off) tf
VDS
VGS
10%
90%
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|---|---|
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