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参数资料
| 型号： | AP4503BGM-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 8.2 A, 30 V, 0.018 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件页数： | 6/7页 |
| 文件大小： | 118K |
| 代理商： | AP4503BGM-HF |
P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
30
-30
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
6
AP4503BGM-HF
0
10
20
30
40
01
234
56
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dra
in
C
u
rre
nt
(A
)
T A =25
o C
-10 V
- 7.0 V
- 6.0 V
- 5.0 V
V G = - 4.0 V
0
10
20
30
40
01
23
45
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dra
in
C
u
rre
nt
(A
)
T A = 150
o C
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0 V
20
30
40
50
24
68
10
-V GS , Gate-to-Source Voltage (V)
R
DS
(ON)
(m
Ω
)
I D = -4 A
T A =25
o C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
No
rma
li
ze
d
R
DS
(ON)
I D = -6 A
V G = - 10V
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0.4
0.6
0.8
1.0
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
No
rma
li
ze
d
-V
GS
(t
h
)(V
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
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