参数资料
型号: AP4506GEH
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 30 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252
封装: ROHS COMPLIANT PACKAGE-5
文件页数: 2/7页
文件大小: 119K
代理商: AP4506GEH
N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=6A
-
24
m
VGS=4.5V, ID=4A
-
32
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
17
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
10
uA
Drain-Source Leakage Current (Tj=70
oC) V
DS=24V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+30
uA
Qg
Total Gate Charge
2
ID=6A
-
8.3
13
nC
Qgs
Gate-Source Charge
VDS=24V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
5
-
ns
tr
Rise Time
ID=6A
-
18
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=2.5Ω
-4
-
ns
Ciss
Input Capacitance
VGS=0V
-
575
920
pF
Coss
Output Capacitance
VDS=25V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=6A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=6A, VGS=0V
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
14
-
nC
2
AP4506GEH
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