参数资料
型号: AP4532GM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 5 A, 30 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, SOP-8
文件页数: 1/11页
文件大小: 112K
代理商: AP4532GM
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
30V
▼ Low On-resistance
RDS(ON)
50mΩ
▼ Fast Switching
ID
5A
P-CH
BVDSS
-30V
RDS(ON)
70mΩ
Description
ID
-4A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current
3
-4
A
ID@TA=70℃
Continuous Drain Current
3
-3.2
A
IDM
Pulsed Drain Current
1
-20
A
PD@TA=25℃
Total Power Dissipation
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
62.5
℃/W
Data and specifications subject to change without notice
200315021
4
20
AP4532GM
2.0
Parameter
Thermal Data
Pb Free Plating Product
30
±20
5
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G2
D2
S2
G1
D1
S1
S1
G1
S2
G2
D1
D2
SO-8
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