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参数资料
| 型号： | AP4532GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 30 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 7/11页 |
| 文件大小： | 112K |
| 代理商： | AP4532GM |
AP4532GM
N-Channel
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
0
1
2
3
4
5
6
25
50
75
100
125
150
T c , Case Temperature (
o C)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
0
1
2
3
0
50
100
150
T c ,Case Temperature (
o C)
P
D
(W
)
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rm
aliz
ed
T
h
er
m
a
lRes
pon
se
(
R
th
ja
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V DS (V)
I
D
(A
)
T C=25
o C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
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