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参数资料
| 型号： | AP4924GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 20 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 5/6页 |
| 文件大小： | 102K |
| 代理商： | AP4924GM |
AP4924GM
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
5
10
100
1000
1
5
9
1317
2125
29
V DS (V)
C
(
p
F)
f=1.0MHz
Ciss
Coss
Crss
0
1
2
3
4
5
6
02468
10
12
Q G , Total Gate Charge (nC)
V
GS
,
Gate
to
S
o
u
rc
eV
o
ltage
(
V
)
I D=6A
V DS=10V
0.01
0.10
1.00
10.00
100.00
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V SD (V)
I
S
(A
)
T j=25
o C
T j=150
o C
0
0.5
1
1.5
-50
0
50
100
150
T j ,Junction Temperature (
o C)
V
GS
(t
h
)(V
)
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|---|---|
| AP4924M | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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